| PART |
Description |
Maker |
| CMLM0605 |
MULTI DISCRETE MODULESURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| CMLM0405 |
MULTI DISCRETE MODULESURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| CMLM0605 CMLM0605BK |
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SMD Module PNP Low VCE(SAT) & Low VF Schottky Diode
MULTI DISCRETE MODULE⑩ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE?/a> SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| CMLM3405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
| ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender
HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z)
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes
List of Unclassifed Manufacturers
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| 10TQ045S 10TQ040S 10TQ030S 10TQ035 10TQ 10TQ045 10 |
SCHOTTKY RECTIFIER 肖特基整流器
35V 10A Schottky Discrete Diode in a D2-Pak package 35V0A条肖特基二极管的分立的一D2 - PAK封装
40V 10A Schottky Discrete Diode in a D2-Pak package
35V 10A Schottky Discrete Diode in a TO-220AC package
45V 10A Schottky Discrete Diode in a TO-220AC package
45V 10A Schottky Discrete Diode in a D2-Pak package
|
International Rectifier, Corp.
SIEMENS AG
IRF[International Rectifier]
|
